Power Semiconductor Devices

ACE 641 Power Semiconductor Devices (3 Credit Hours)

Review of structures, characteristics, modelling, safe operating requirement and protection of

silicon/silicon-carbide/gallium-nitride based power semiconductor devices namely:

i. Power Diodes.

ii. Power Transistors (Bipolar Junction Transistors (BJTs), Fields Effect Transistors (FETs),

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Insulated Gate

Bipolar Transistors (IGBTs)).

iii. Thyristors (Silicon controlled Rectifiers (SCRs), Gate Turn off Thyristors (GTOs), Triacs

and MOS controlled Thyristors (MCTs)).

Power semiconductor device integration and fabrication techniques to achieve high breakdown

voltages, high current carrying capability, low on resistance, fast switching speed and high

reliability.